The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o
Calculation of surface energy and simulation of reconstruction for diamond cubic crystals (0 0 1) surface
β Scribed by Jian-Min Zhang; Hong-Yan Li; Ke-Wei Xu; Vincent Ji
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 462 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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β¦ Synopsis
The energies of the ideal (1 Γ 1), dimer (2 Γ 1) and trimer (3 Γ 1) structures on (0 0 1) surfaces have been calculated by using MEAM for three diamond cubic crystals C, Si and Ge. From energy minimization, the dimer (2 Γ 1) and trimer (3 Γ 1) reconstructions can be formed naturally and without any barrier. The dimer corresponding to the lowest energy implies it is the easiest to be formed and the most stable as well. This is consistent with the experimental result and other theoretical prediction. Determined dimer bond length of 2.43 A Λfor Si drops in the experimental range of 2.20-2.47 A Λ, and of 2.5 A Λfor Ge is close to the 2.55 A Λmeasured by X-ray diffraction. The trimer, constructed here firstly, has not been observed in the experimental due to its slightly higher energy than dimer. Its bond lengths have been determined to be 1.96, 2.64 and 2.75 A Λfor C, Si and Ge, respectively. Further experimental testing is needed.
π SIMILAR VOLUMES
Ab initio density functional theory (DFT) was employed to study reconstructions of diamond (1 0 0) surfaces in the presence of hydrogen, oxygen and hydroxyl. Clean and (2 Γ 1):1H surfaces are taken as reference. The properties of oxidization diamond surfaces with several adsorption structures, namel
In the present work, the diamond (1 0 0) surface is simulated by using a (2 Γ 1) supercell (Fig. ), which includes a slab consisting of 10 carbon layers with two C atoms per plane, plus