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Calculation of electric field and optical transitions in InGaN∕GaN quantum wells

✍ Scribed by Christmas, Ursula M. E.; Andreev, A. D.; Faux, D. A.


Book ID
120494226
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
459 KB
Volume
98
Category
Article
ISSN
0021-8979

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## Abstract Multi‐quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the ch