✦ LIBER ✦

Calculating the Influence of External Charges on the Photoluminescence of a CdSe Quantum Dot

✍ Scribed by Wang,

Book ID: 119947274
Publisher: American Chemical Society
Year: 2001
Tongue: English
Weight: 126 KB
Volume: 105
Category: Article
ISSN: 0022-3654
DOI: 10.1021/jp0032053

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The influence of bio-conjugation on phot

The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots

✍ Torchynska, Tetyana V.; Vorobiev, Yuri V.; Makhniy, Victor P.; Horley, Paul P. 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 729 KB

Influence of the Dielectric Environment

Influence of the Dielectric Environment on the Photoluminescence Intermittency of CdSe Quantum Dots

✍ Dr. Abey Issac; Cornelius Krasselt; Prof. Frank Cichos; Prof. Christian von Borc 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 544 KB

Controlling the photoluminescence of CdS

Controlling the photoluminescence of CdSe/ZnS quantum dots with a magnetic field

✍ Di Vece, M; Kolaric, B; Baert, K; Schweitzer, G; Obradovic, M; Vallée, R A L; Li 📂 Article 📅 2009 🏛 Institute of Physics 🌐 English ⚖ 298 KB

Effect of Electrochemical Charge Injecti

Effect of Electrochemical Charge Injection on the Photoluminescence Properties of CdSe Quantum Dot Monolayers Anchored to Oxide Substrates

✍ Ingole, Pravin P.; Hickey, Stephen G.; Waurisch, Christian; Gaponik, Nikolai; Ey 📂 Article 📅 2013 🏛 Oldenbourg Wissenschaftsverlag 🌐 German ⚖ 470 KB

The Quenching of CdSe Quantum Dots Photo

The Quenching of CdSe Quantum Dots Photoluminescence by Gold Nanoparticles in Solution

✍ Babak Nikoobakht; Clemens Burda; Markus Braun; Man Hun; Mostafa A. El-Sayed 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 181 KB

Influence of Capping Conditions on CdSe/

Influence of Capping Conditions on CdSe/ZnSe Quantum Dot Formation

✍ T. Passow; K. Leonardi; H. Heinke; D. Hommel; J. Seufert; G. Bacher; A. Forchel 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB

CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons