𝔖 Bobbio Scriptorium
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CALCULATED LEVEL ENERGIES, TRANSITION PROBABILITIES, AND LIFETIMES OF SILICON-LIKE IONS

✍ Scribed by C Kohstall; S Fritzsche; B Fricke; W.-D Sepp


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
259 KB
Volume
70
Category
Article
ISSN
0092-640X

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✦ Synopsis


We present theoretical excitation energies and lifetimes for the 27 low-lying levels of silicon-like ions of S, Ar, Ca, Ti, Fe, Zn, and Kr (16 Υ… Z Υ… 36). Special attention has been paid to provide a complete tabulation of all electric-dipole (E1) allowed transitions from levels of the 3s3p 3 and 3s 2 3p3d excited configurations to those of the 3s 2 3p 2 ground-state configuration, including all weak and intercombination transitions. Large-scale multiconfiguration Dirac-Fock wave functions are applied to compute transition energies and probabilities. We further investigate the decay of the 3s 2 3p3d J Ο­ 4 level which is connected to the ground-state configuration only via forbidden M2 transitions but otherwise mainly decays via M1 to lower-lying levels of the same parity. For a few selected data, we compare our results with experiment and with previous computations.


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