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c-v-ω andG-v-ω characteristics of native Oxide-GaAs interfaces of and orientations

✍ Scribed by Narsale, A. M. ;Arora, B. M.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
318 KB
Volume
95
Category
Article
ISSN
0031-8965

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The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac