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by hard x-ray photoelectron spectroscopy

✍ Scribed by Schlueter, C.; Orgiani, P.; Lee, T.-L.; Petrov, A. Yu.; Galdi, A.; Davidson, B. A.; Zegenhagen, J.; Aruta, C.

Book ID
120646650
Publisher
The American Physical Society
Year
2012
Tongue
English
Weight
909 KB
Volume
86
Category
Article
ISSN
1098-0121

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## Abstract We carried out nondestructive measurements of the depth profile of etching‐induced damage in p‐type gallium nitride (p‐GaN), in particular surface band bending, using Hard X‐ray Photoelectron Spectroscopy (HAX‐PES). HAX‐PES at different take‐off angles of photoelectrons made it clear th