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Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation

✍ Scribed by Park, C.; Chadi, D.


Book ID
115468076
Publisher
The American Physical Society
Year
1995
Tongue
English
Weight
209 KB
Volume
75
Category
Article
ISSN
0031-9007

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## Abstract Formulae for the crystal deformation due to the introduction of charge carriers are obtained using the thermodynamic potential method. This phenomenon is caused by the direct electron‐lattice interaction. A change in the energy gap due to this effect is also estimated. for example the b