Electron-Lattice Interaction and its Effect on the Energy Gap in Semiconductors

✍ Scribed by T. Figielski

• Book ID: 105385661
• Publisher: John Wiley and Sons
• Year: 1963
• Tongue: English
• Weight: 202 KB
• Volume: 3
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.19630031013

✦ Synopsis

Abstract

Formulae for the crystal deformation due to the introduction of charge carriers are obtained using the thermodynamic potential method. This phenomenon is caused by the direct electron‐lattice interaction. A change in the energy gap due to this effect is also estimated. for example the band gap in InSb is reduced by about 0.01 eV when 10^19^ electrons per cm^3^ are introduced into the crystal.