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Broadband characteristics of a parallel diode linearized amplifier

✍ Scribed by Ka Tsun Mok; Wing Shing Chan; Chun Kai Leung; Chi Sun Yu; Chung Wai Li

Book ID
102519019
Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
64 KB
Volume
36
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A compact broadband linearized amplifier, using a parallel‐configured diode connected directly to the base of the transistor, is proposed. It has shown a reduction in spectral re‐growth of 8–20 dB for the first sidelobe in the frequency range of 0.8–2 GHz. Β© 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 82–83, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10680

πŸ“œ SIMILAR VOLUMES

2 GHz parallel diode linearized amplifie
2 GHz parallel diode linearized amplifier
✍ Chi Sun Yu; Wing Shing Chan; Wing-Le Chan πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 121 KB

A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to gi¨e a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable fo