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2 GHz parallel diode linearized amplifier

✍ Scribed by Chi Sun Yu; Wing Shing Chan; Wing-Le Chan

Book ID
101273881
Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
121 KB
Volume
25
Category
Article
ISSN
0895-2477

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✦ Synopsis

A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to gi¨e a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization.

πŸ“œ SIMILAR VOLUMES

Broadband characteristics of a parallel
Broadband characteristics of a parallel diode linearized amplifier
✍ Ka Tsun Mok; Wing Shing Chan; Chun Kai Leung; Chi Sun Yu; Chung Wai Li πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 64 KB

## Abstract A compact broadband linearized amplifier, using a parallel‐configured diode connected directly to the base of the transistor, is proposed. It has shown a reduction in spectral re‐growth of 8–20 dB for the first sidelobe in the frequency range of 0.8–2 GHz. Β© 2002 Wiley Periodicals, Inc.

A 5.5-GHz SiGe HBT Doherty amplifier usi
A 5.5-GHz SiGe HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler
✍ Haiwen Liu; Toshihiko Yoshimasu πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 421 KB

## Abstract A 5.5‐GHz Doherty amplifier using commercial 0.35‐μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on‐chip with circuit reduction, a 90Β° 3‐dB hybr