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Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates

✍ Scribed by Benyoucef, M.; Usman, M.; Reithmaier, J. P.


Book ID
121447234
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
700 KB
Volume
102
Category
Article
ISSN
0003-6951

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Long-wavelength emission from single InA
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In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA