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Breakdown voltage of field plate and field-limiting ring techniques: numerical comparison

✍ Scribed by Goud, C.B.; Bhat, K.N.


Book ID
114534671
Publisher
IEEE
Year
1992
Tongue
English
Weight
322 KB
Volume
39
Category
Article
ISSN
0018-9383

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## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp