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Breakdown voltage in LDMOS transistors using internal field rings

✍ Scribed by Nezar, A.; Salama, C.A.T.

Book ID
114538244
Publisher
IEEE
Year
1991
Tongue
English
Weight
469 KB
Volume
38
Category
Article
ISSN
0018-9383

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## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp