Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes
✦ LIBER ✦
Bowing of epitaxial layers grown on bulk GaN substrates
✍ Scribed by M. Sarzyński; M. Kryśko; R. Czernecki; G. Targowski; B. Łucznik; G. Kamler; J. Domagała; I. Grzegory; M. Leszczyński; S. Porowski
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 152 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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