The formulation and calculation of quantum electron transport in double-gate metal oxide semi-conductor field effect transistors (DGMOSFETs) is presented based on multiband non-equilibrium Green's function (NEGF) formalism. In the formulation we employ the empirical sp 3 s à tight-binding approximat
✦ LIBER ✦
Boundary treatments in non-equilibrium Green’s function (NEGF) methods for quantum transport in nano-MOSFETs
✍ Scribed by Haiyan Jiang; Sihong Shao; Wei Cai; Pingwen Zhang
- Book ID
- 108164181
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 544 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0021-9991
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