Quantum electron transport modeling in d
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Helmy Fitriawan; Matsuto Ogawa; Satofumi Souma; Tanroku Miyoshi
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Article
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2007
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Elsevier Science
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English
⚖ 330 KB
The formulation and calculation of quantum electron transport in double-gate metal oxide semi-conductor field effect transistors (DGMOSFETs) is presented based on multiband non-equilibrium Green's function (NEGF) formalism. In the formulation we employ the empirical sp 3 s à tight-binding approximat