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Bottom-gated epitaxial graphene

✍ Scribed by Waldmann, Daniel; Jobst, Johannes; Speck, Florian; Seyller, Thomas; Krieger, Michael; Weber, Heiko B.

Book ID
109934947
Publisher
Nature Publishing Group
Year
2011
Tongue
English
Weight
245 KB
Volume
10
Category
Article
ISSN
1476-1122

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The