Boron and phosphorous diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients : K. Shimakura, T. Suzuki and Y. Yadoiwa. Solid State Electronics18, 991 (1975)

• Publisher: Elsevier Science
• Year: 1976
• Tongue: English
• Weight: 120 KB
• Volume: 15
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(76)90101-3