𝔖 Bobbio Scriptorium

✦ LIBER ✦

Bistable noise in p-n junctions : S. T. Hsu. Solid State Electron.14 (1971), p. 487

Publisher: Elsevier Science
Year: 1972
Tongue: English
Weight: 108 KB
Volume: 11
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(72)90780-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Noise and y-parameters in MOS FET's : P.

Noise and y-parameters in MOS FET's : P. S. Rao and A. Van der Ziel. Solid State Electron.14 (1971), p. 939

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Space-charge recombination in a forward-

Space-charge recombination in a forward-biased diffused p-n junction: S. C. Choo. Solid St. Electron.14 (1971), p. 1201

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 107 KB

Excess surface currents in p-n junctions

Excess surface currents in p-n junctions and bipolar transistors: D. Esteve and H. Martinot. Solid St. Electron.14 (1971), p. 693

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 114 KB

Experimental results on transient space

Experimental results on transient space charge limited currents in p-n junctions : C. Canali, G. Ottaviani, A. Taroni, G. Zanarini. Solid State Electron.14 (1971), p. 661

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 108 KB

Doping dependence of second breakdown in

Doping dependence of second breakdown in a p-n junction: H. C. Chen, W. M. Portnoy and D. K. Ferry. Solid State Electron.14 (1971), p. 747

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 215 KB

Characteristics of the junction-gate fie

Characteristics of the junction-gate field effect transistor with short channel length : T. L. Chiu and H. N. Ghosh. Solid State Electron.14 (1971), p. 1307

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 115 KB