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Bistable amphoteric centers with reverse order of electron levels in semiconductors

✍ Scribed by A. G. Nikitina; V. V. Zuev


Book ID
111443780
Publisher
Springer
Year
2007
Tongue
English
Weight
206 KB
Volume
41
Category
Article
ISSN
1063-7826

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Topological interaction of shallow impurities with dislocations is studied. This problem is related with the violation of the topological structure of the crystal lattice by dislocations. The interaction results in a topological gauge field that is confined inside the dislocation cores but influence