The related optical and electrical parameters of amorphous Ge-Bi-Se thin films were studied. The dependence of optical and electrical properties on the Bi content was observed in most compositions. At Bi 410 at% the behavior show a switch from p to n type conduction mechanism. The correlation betwee
β¦ LIBER β¦
Bismuth influence on the xerographic parameters of amorphous Se:Bi films
β Scribed by Bettsteller, R. ;Jantoss, W. ;Herms, W.
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 326 KB
- Volume
- 146
- Category
- Article
- ISSN
- 0031-8965
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