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Binding of gas atoms to extended crystal defects in molybdenum studied by positrons

✍ Scribed by H. E. Hansen; S. Linderoth; W. Wierzchowski; K. Petersen


Publisher
Springer
Year
1982
Tongue
English
Weight
393 KB
Volume
27
Category
Article
ISSN
1432-0630

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Extended Defects Formation in Si Crystal
✍ Fedina, L. ;Gutakovskii, A. ;Aseev, A. ;Van Landuyt, J. ;Vanhellemont, J. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 515 KB

In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.