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Biexcitonic Bound and Continuum States of Homogeneously and Inhomogeneously Broadened Exciton Resonances

✍ Scribed by Langbein, W. ;Hvam, J.M.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 356 KB
Volume: 190
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200203)190:1<167::aid-pssa167>3.0.co;2-i

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✦ Synopsis

We investigate the influence of excitonic localization on the corresponding biexcitonic states in GaAs quantum wells by spectrally resolved four-wave mixing. With increasing localization, the biexciton binding energy increases, while the biexciton continuum shifts to higher energies. The localization leads to an inhomogeneous broadening of the biexciton binding energy and the biexciton continuum edge. Simultaneously, the oscillator strength of the biexciton continuum-edge is reduced. This is interpreted as a result of the different localization of biexcitonic and excitonic states by the random disorder potential.

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