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Bias enhanced diamond nucleation onto 3C–SiC(100) surfaces studied by high resolution X-ray photoelectron and high resolution electron energy loss spectroscopies

✍ Scribed by Arnault, J.-C.; Saada, S.; Michaelson, Sh.; Hangaly, N.K.; Akhvlediani, R.; Hoffman, A.


Book ID
123098795
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
805 KB
Volume
17
Category
Article
ISSN
0925-9635

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Comparison of diamond bias enhanced nucl
✍ Hoffman, A. ;Michaelson, Sh. ;Akhvlediani, R. ;Hangaly, N. K. ;Gsell, S. ;Bresci 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 508 KB

## Abstract Bias enhanced nucleation (BEN) is the crucial process step to generate epitaxially oriented diamond nuclei on various substrates comprising elemental semiconductors, carbides and non‐carbide forming metals. Numerous studies on Si and SiC have shown that the diamond growth immediately st