Bi2Sa3 crystals doped with halogen
✍ Scribed by Bogatyrev, I. F. ;Vaško, A. ;Tichý, L. ;Horák, J.
- Publisher
- John Wiley and Sons
- Year
- 1974
- Tongue
- English
- Weight
- 182 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0031-8965
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The single crystals of the ternary system based on Bi 2-x Tl x Se 3 (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ ⊥c , Hall coefficient R H (B||c), and Seebe
## Transport Coefficient of Gallium-doped Bi,Te, Single Crystals Gallium-doped Bi,Te, single crystals were prepared by means of a modified Bridgman method. Temperature dependences of the Hall constant R,(B 1) c), electrical conductivity olC and Seebeck coefficient S(dT I c) were measured on the s