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Transport Coefficient of Gallium-doped Bi2Te3 Single Crystals

✍ Scribed by Ing. J. Navrátil; Doz. P. Lošťák; Prof. J. Horák

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
359 KB
Volume
26
Category
Article
ISSN
0232-1300

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✦ Synopsis

Transport Coefficient of Gallium-doped Bi,Te, Single Crystals

Gallium-doped Bi,Te, single crystals were prepared by means of a modified Bridgman method.

Temperature dependences of the Hall constant R,(B 1) c), electrical conductivity olC and Seebeck coefficient S(dT I c) were measured on the samples of these crystals in the temperature interval of 100-400 K. The variations of the investigated transport coefficients with increasing Ga content in the samples showed that Ga atoms in the Bi,Te, crystal lattice behave as donors. This effect is qualitatively explained on the basis of a model of point defects in Bi,Te,(Ga) crystals; singly ionised gallium atoms in interstitial sites; Gai, are considered to be the most probable defects.

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