Behavior of carriers in δ-doped quantum wells under in-plane magnetic fields

✍ Scribed by A. T. Lino; E. K. Takahashi; L. M. R. Scolfaro; J. R. Leite

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 602 KB
• Volume: 60
• Category: Article
• ISSN: 0020-7608
• DOI: 10.1002/(sici)1097-461x(1996)60:7<1559::aid-qua37>3.0.co;2-w

✦ Synopsis

Self-consistent electronic structure calculations of &doped quantum wells (QW) in the presence of in-plane magnetic fields B up to 20 Tesla are carried out within the frameworks of the effective mass and the local density approximations. QWs composed of two layers of Gal -.Al,As, separated by a layer of GaAs with a donor &doped she$t in the center, are considered. The width of the GaAs layer was varied from 100 to 400 A. It is shown that the diamagnetic shift increases with the increasing of the GaAs QW width. The magnetic field induces remarkable changes in the energy dispersions of electrons and holes, along an in-plane direction perpendicular to B. The most striking effect occurs in the nature of the band gap of these systems. We found that the valence band displays a double-maximum character instead of a single maximum at the center of the Brillouin zone. 0 1996 John Wiley & Sons, Inc.

ation of high-mobility 2D electron gas systems [ 13. Such structures are obtained by atomic layer doping of epitaxially grown, e.g., GaAs or GaAlAs crystals. An ideal &doping profile is achieved by confining the dopant atoms to a crystal monolayer, generating a V-shaped potential well in the host material. The presence of a 2D electron gas with a characteristic subband structure in the V-shaped potential well has been confirmed by several ex-