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Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD

✍ Scribed by J. Vanek; V. Cech; R. Prikryl; J. Zemek; V. Perina


Book ID
105721231
Publisher
Springer
Year
2004
Tongue
English
Weight
295 KB
Volume
54
Category
Article
ISSN
0011-4626

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Plasma characteristics of low-k SiOC(–H)
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We report in-situ plasma diagnostics during the deposition of low dielectric constant SiOC(-H) thin films on p-Si(100) substrates by using plasma enhanced chemical vapor deposition with dimethyldimethoxysilane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. The bulk plasma was characterized b