✦ LIBER ✦

Base-emitter injection characterization in low-temperature pseudo-heterojunction bipolar transistors

✍ Scribed by Yano, K.; Nakazato, K.; Miyamoto, M.; Aoki, M.; Shimohigashi, K.

Book ID: 114536903
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 840 KB
Volume: 37
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.59912

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Emitter injection efficiency in heteroju

Emitter injection efficiency in heterojunction bipolar transistors

✍ Arnost Neugroschel 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 321 KB

High-frequency characteristics of low-te

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

✍ Miyamoto, M.; Yano, K.; Tamaki, Y.; Aoki, M.; Nishida, T.; Seki, K.; Shimohigash 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 726 KB

Heterojunction bipolar transistors with

Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE

✍ G.O. Munns; W.L. Chen; G.I. Haddad 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 538 KB

A novel double-base heterojunction bipol

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

✍ Prinz, E.J.; Xiao, X.; Schwartz, P.V.; Sturm, J.C. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 262 KB

Graded-GaAs1−xPx bases in heterojunction

Graded-GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters

✍ Michio Ohkubo; Nariaki Ikeda; Takao Ninomiya 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 518 KB

## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.

Secondary ion mass spectroscopy depth pr

Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE

✍ P.M. Enquist 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 674 KB