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Barrier characteristics of Pt/Ru Schottky contacts onn-type GaN based onI–V–TandC–V–Tmeasurements

✍ Scribed by N NANDA KUMAR REDDY; V RAJAGOPAL REDDY


Book ID
113093839
Publisher
Springer-Verlag
Year
2012
Tongue
English
Weight
534 KB
Volume
35
Category
Article
ISSN
0250-4707

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Electrical characteristics and interfaci
✍ Reddy, N. Nanda Kumar ;Reddy, V. Rajagopal ;Choi, C.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 687 KB

## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu