Electrical characteristics and interfaci
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Reddy, N. Nanda Kumar ;Reddy, V. Rajagopal ;Choi, C.-J.
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Article
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2011
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John Wiley and Sons
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English
⚖ 687 KB
## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu