𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Bandgap energy of InN and its temperature dependence

✍ Scribed by Y. Ishitani; H. Masuyama; W. Terashima; M. Yoshitani; N. Hashimoto; S.B. Che; A. Yoshikawa


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
479 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Temperature dependent EXAFS of InN
✍ Katsikini, M. ;Pinakidou, F. ;Paloura, E. C. ;Komninou, Ph. ;Georgakilas, A. ;We πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 264 KB

## Abstract The effect of temperature on the bonding environment of indium in an InN epilayer is studied using X‐ray absorption fine structure (EXAFS) spectroscopy. Shell‐by‐shell fitting of the EXAFS spectra reveals that, in the temperature range 80‐245 K, the change in the nearest neighbour dista

Temperature dependence of carrier lifeti
✍ Chen, Fei ;Cartwright, A. N. ;Lu, H. ;Schaff, W. J. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 74 KB

## Abstract Time‐resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10^18^ to 10^19^ cm^–3^. The observed decay time at 20 K is well explained by a dominating radiative interban

Temperature dependence of the bandgap in
✍ C. RincΓ³n; J. GonzΓ‘lez πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science βš– 260 KB

The dependence of the bandgap in CuInSe2 on temperature is explained by a model which takes into account the contribution of all the vibrational modes in the electron-phonon interaction.

Temperature dependence of optical bandga
✍ Chih-Feng Su; Sheng-Shin Wang; Shiow-Jing Tang; Jyh-Shyang Wang; Kuan-Cheng Chiu πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 788 KB

Temperature-dependent optical transmission is performed on C 60 polycrystalline films of various thicknesses with incident photon energies from 1.46 to 2.07 eV. Remarkable absorption peaks together with the dependence of peak intensity on film thickness are observed and explained in terms of an ener

Temperature Dependence of Hexagonal-GaN
✍ L. Siozade; S. Colard; M. Mihailovic; J. Leymarie; A. Vasson; N. Grandjean; M. L πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 154 KB πŸ‘ 2 views

First, spectroscopic ellipsometry (SE) is carried out at 300 K together with reflectivity measurements versus temperature from 4 to 300 K, in order to determine the temperature dependence of the refractive index of h-GaN films in the transparent region (350 to 600 nm). The SE measurements are carrie