Temperature dependence of the bandgap in CuInSe2
✍ Scribed by C. Rincón; J. González
- Publisher
- Elsevier Science
- Year
- 1986
- Weight
- 260 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0379-6787
No coin nor oath required. For personal study only.
✦ Synopsis
The dependence of the bandgap in CuInSe2 on temperature is explained by a model which takes into account the contribution of all the vibrational modes in the electron-phonon interaction.
📜 SIMILAR VOLUMES
Temperature-dependent optical transmission is performed on C 60 polycrystalline films of various thicknesses with incident photon energies from 1.46 to 2.07 eV. Remarkable absorption peaks together with the dependence of peak intensity on film thickness are observed and explained in terms of an ener
First, spectroscopic ellipsometry (SE) is carried out at 300 K together with reflectivity measurements versus temperature from 4 to 300 K, in order to determine the temperature dependence of the refractive index of h-GaN films in the transparent region (350 to 600 nm). The SE measurements are carrie
## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
The temperature dependent structural phase transition from the tetragonal chalcopyrite like structure to the cubic sphalerite like structure in CuInSe 2 was investigated by in-situ high temperature synchrotron radiation X-ray diffraction. The data were collected in 1K steps during heating and coolin