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Bandgap bowing in BGaN thin films

✍ Scribed by Ougazzaden, A.; Gautier, S.; Moudakir, T.; Djebbour, Z.; Lochner, Z.; Choi, S.; Kim, H. J.; Ryou, J.-H.; Dupuis, R. D.; Sirenko, A. A.

Book ID
121719207
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
636 KB
Volume
93
Category
Article
ISSN
0003-6951

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The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In 12x Al x N alloys with x # 0:25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of , 0.7 eV for InN. A bowing parameter of 3 eV was deter