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Band offsets and zone-folding in GaAsAlAs (001) superlattices

✍ Scribed by M.A. Gell; M. Jaros; D.C. Herbert


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
412 KB
Volume
3
Category
Article
ISSN
0749-6036

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X-Ray Diffraction Analysis of the In/Ga
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Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice