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Band-mixing and strain effects in InAs/GaAs quantum rings

✍ Scribed by B. Lassen; M. Willatzen; D. Barettin

Book ID
108269046
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
426 KB
Volume
47
Category
Article
ISSN
0749-6036

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Strain and optical transitions in InAs quantum dots on (001) GaAs
✍ Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 218 KB

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot