## Abstract The mechanisms of Schottky barrier formation are reviewed from the metalβinduced gap state model to the universal defect model, and the chemical reaction model. The recent progress in understanding barrier heights and band offsets in Si β high dielectric constant oxide and metal high di
β¦ LIBER β¦
Band bending and band alignment at HfO2/HfSixOy/Si interfaces
β Scribed by Weijie Song; Michiko Yoshitake; Ruiqin Tan; Isao Kojima
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 605 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Band alignment at metal-semiconductor an
β
Robertson, John
π
Article
π
2010
π
John Wiley and Sons
π
English
β 565 KB
Kelvin probe study of band bending at or
β
Ishii, H. ;Hayashi, N. ;Ito, E. ;Washizu, Y. ;Sugi, K. ;Kimura, Y. ;Niwano, M. ;
π
Article
π
2004
π
John Wiley and Sons
π
English
β 501 KB
XPS and IPE analysis of HfO2 band alignm
β
M. Perego; G. Seguini; M. Fanciulli
π
Article
π
2008
π
Elsevier Science
π
English
β 357 KB
A detailed analysis of the band alignment between atomic-layer deposition (ALD)grown HfO 2 thin films and n-type Ge(1 0 0) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate remo
Chemical reactivity and band offset at t
β
Manisha Kundu; Shailaja Mahamuni; Shubha Gokhale; S.K. Kulkarni
π
Article
π
1993
π
Elsevier Science
π
English
β 713 KB
Band bending measurement of HfO2/SiO2/Si
β
K. Kakushima; K. Okamoto; M. Adachi; K. Tachi; J. Song; S. Sato; T. Kawanago; P.
π
Article
π
2008
π
Elsevier Science
π
English
β 577 KB
Valence-band lineups at highly strained
β
San-huang Ke; Ren-zhi Wang; Mei-chun Huang
π
Article
π
1995
π
Elsevier Science
π
English
β 452 KB