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Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

✍ Scribed by Dares Kaewket; Sakuntam Sanorpim; Sukkaneste Tungasmita; Ryuji Katayama; Kentaro Onabe


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
581 KB
Volume
42
Category
Article
ISSN
1386-9477

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TEM Investigations of (GaIn)(NAs)/GaAs M
✍ A. Hasse; K. Volz; A.K. Schaper; J. Koch; F. HΓΆhnsdorf; W. Stolz πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 323 KB πŸ‘ 1 views

Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying