TEM Investigations of (GaIn)(NAs)/GaAs M
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A. Hasse; K. Volz; A.K. Schaper; J. Koch; F. HΓΆhnsdorf; W. Stolz
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Article
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2000
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John Wiley and Sons
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English
β 323 KB
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Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying