Ballistic transport in nanoscale self-switching devices
โ Scribed by ZiMin Chen; ZhiYuan Zheng; KunYuan Xu; Gang Wang
- Book ID
- 107372627
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 669 KB
- Volume
- 56
- Category
- Article
- ISSN
- 1001-6538
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A key simulation issue is the development of a dissipation formalism for the time dependent density operator equation, that is amenable to numerical methods and incorporates the role of the environment on state renormalization and dissipation. Using standard super-operator calculus, projection opera
Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation