Dissipation and quantum transport simulations in nanoscale devices
β Scribed by H.L. Grubin; D.K. Ferry; R. Akis
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 192 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
β¦ Synopsis
A key simulation issue is the development of a dissipation formalism for the time dependent density operator equation, that is amenable to numerical methods and incorporates the role of the environment on state renormalization and dissipation. Using standard super-operator calculus, projection operators, and separating the system of interest from the reservoir, the relevant operator equation is derived. In addition, the role of the reservoir on renormalizing the energy spectrum is discussed.
π SIMILAR VOLUMES
In this paper we introduce a phenomenology for inserting dissipation into the singleparticle SchrΓΆdinger equation for carrier transport by utilizing appropriate nonHermitian additions to the Hamiltonian. The nonHermitian terms are determined by incorporating model particle trapping/de-trapping, mome
Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation
1, rue Grandville -54042 Nancy -France. equipment design, -selection and design of gas-liquid reactors, -safety problems in industry, not to mention numerous patents concerning many processes and the manufacture of new products. What made him famous among the chemical engineering fraternity is cer