Ballistic transport in GaAs quantum wires—A short history
✍ Scribed by T.J. Thornton
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 179 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
A brief review of ballistic transport in GaAs quantum wires is presented. Methods for fabricating and characterising wires of widths 0.1-1 µm are described. The new physics which emerged from measurements of electron transport in these wires is illustrated using conductance quantisation, quenching of the Hall effect, the negative bend resistance and diffuse boundary scattering as examples.
📜 SIMILAR VOLUMES
We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic
We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through t