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Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

โœ Scribed by Ng, B.K.; David, J.P.R.; Plimmer, S.A.; Rees, G.J.; Tozer, R.C.; Hopkinson, M.; Hill, G.


Book ID
114538853
Publisher
IEEE
Year
2001
Tongue
English
Weight
164 KB
Volume
48
Category
Article
ISSN
0018-9383

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Temperature dependence of the avalanche
โœ A.M. Barnett; J.E. Lees; D.J. Bassford; J.S. Ng; C.H. Tan; R.B. Gomes ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 260 KB

The temperature dependence of the avalanche multiplication process at soft X-ray energies in Al 0.8 Ga 0.2 As avalanche photodiodes (APDs) is investigated at temperatures from + 80 to ร€ 20 1C. The temperature dependence of the pure electron initiated multiplication factor (M e ) and the mixed carrie