35 1674. Deep uv lithography. (USA) Using deep uv light ranging from 2000 to 2600 A, submicrometer patterns in photoresist with height-to-width aspect ratios as high as 15 can be achieved. The well known electron-beam positive resist, polymethyl methacrylate (PMMA), is used as the deep uv photoresis
โฆ LIBER โฆ
Automatic registration of scanning electron microscope images
โ Scribed by F.W.M. Stentiford; T.J. Twell
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 546 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
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