Auger recombination with traps in quantum-well semiconductors
β Scribed by A. Haug
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 252 KB
- Volume
- 56
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
The experimental determination of Auger coefficients in GaSb/AlSb multi quantum well heterostructures is reported for the first time. The luminescence at E, and EgtAO, recorded under the same experilnental conditions, is used to monitor the carrier recombination channels. A quantitative determinatio
We oresent a calculation of the Auger recombination rate for the CHCC process in a model of a auantum well heterostructure. The calculation differs frcm the bulk Auger calculations because carriers trapped in the quantum wells reside within sub-bands associated with the different bound states of th