Auger recombination in GaSbAlSb multi quantum well heterostructures

✍ Scribed by E. Zielinski; H. Schweizer; G. Griffiths; H. Kroemer; S. Subbanna

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 440 KB
• Volume: 4
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(88)90220-0

✦ Synopsis

The experimental determination of Auger coefficients in GaSb/AlSb multi quantum well heterostructures is reported for the first time. The luminescence at E, and EgtAO, recorded under the same experilnental conditions, is used to monitor the carrier recombination channels. A quantitative determination of the recombination coefficients is achieved applying coupled carrier rate equations for the conduction and the valence subbands including the split-off valence band. Information on the actual carrier density is obtained by line shape analysis of the E,-emission. Two dimensional carrier densities up to 1012cm~' are determined. Auger coefficients exhibit a pronounced well width dependence: above 1OOA C = 4~10~27s~1cm6 whereas at 50A values are 10 times smaller. No resonance of the Auger recombination is observed tuning the band gap energy over the spin-orbit splitting with temperature.