The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.
✦ LIBER ✦
Auger electron spectroscopy (AES) studies of argon ion induced desorption of carbon from tantalum
✍ Scribed by J.L. Pen̄a
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 239 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0167-2584
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