conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units
β¦ LIBER β¦
Auger depth profiling of MNOS structures by ion sputtering
β Scribed by Johannessen, J.S.; Helms, C.R.; Spicer, W.E.; Strausser, Y.E.
- Book ID
- 114592396
- Publisher
- IEEE
- Year
- 1977
- Tongue
- English
- Weight
- 512 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
2504. Auger depth profiling of interface
π
Article
π
1977
π
Elsevier Science
π
English
β 150 KB
Auger electron spectroscopy depth profil
β
S. Hofmann; A. Zalar
π
Article
π
1979
π
Elsevier Science
π
English
β 603 KB
Factors affecting depth resolution and c
β
Y.E. Strausser; C.R. Helms; S. Schwarz; W.E. Spicer
π
Article
π
1978
π
Elsevier Science
π
English
β 64 KB
Improved depth resolution in Auger depth
β
W. Pamler; E. Wildenauer; A. Mitwalsky
π
Article
π
1990
π
John Wiley and Sons
π
English
β 662 KB
## Abstract The depth resolution in Auger inβdepth profiles of TiN thin films on smooth Si substrates is determined by the evolution of a sputterβinduced surface roughness. It is shown that this effect depends critically on the ion angle of incidence. Therefore, the depth resolution can be improved
Sputtering effects in Auger depth profil
β
W. Pamler; M. HΓΌttinger; W. Bensch
π
Article
π
1989
π
Elsevier Science
π
English
β 286 KB
Analysis of Auger sputter depth profiles
β
T. Kitada; T. Harada; S. Tanuma
π
Article
π
1996
π
Elsevier Science
π
English
β 209 KB