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Auger depth profiling of MNOS structures by ion sputtering

✍ Scribed by Johannessen, J.S.; Helms, C.R.; Spicer, W.E.; Strausser, Y.E.


Book ID
114592396
Publisher
IEEE
Year
1977
Tongue
English
Weight
512 KB
Volume
24
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES


2504. Auger depth profiling of interface
πŸ“‚ Article πŸ“… 1977 πŸ› Elsevier Science 🌐 English βš– 150 KB

conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β€’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units

Improved depth resolution in Auger depth
✍ W. Pamler; E. Wildenauer; A. Mitwalsky πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 662 KB

## Abstract The depth resolution in Auger in‐depth profiles of TiN thin films on smooth Si substrates is determined by the evolution of a sputter‐induced surface roughness. It is shown that this effect depends critically on the ion angle of incidence. Therefore, the depth resolution can be improved