Au and AuZn contacts on p-GaSb and the characteristics of the interfaces

✍ Scribed by J.C. Galzerani; A.M. Oyama; P.S. Pizani; R. Landers; S.L. Morelhão; L.P. Cardoso

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 301 KB
• Volume: 20
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90249-m

✦ Synopsis

We analyse the specific contact resistance Pc and the interracial microstructural characteristics (by Auger electron spectroscopy and X-ray diffraction) of Au and AuZn contacts on p-GaSb. The experiments showed that Pc hardly depends on the inclusion of Zn in the metallic film or on the annealing processes, at least for the carrier concentrations available (p/> 1.6 x 1017 cm-3). However, the dependence of Pc on the acceptor concentration leads us to conclude that field emission is the principal conduction mechanism. The efficacy of an Ar glow discharge in considerably reducing the oxide present at the GaSb substrate is demonstrated. We also show that rapid thermal annealing produces much thinner interface-reacted layers than does the conventional (resistive) heat treatment.