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Atomistic modeling of amorphous silicon carbide using a bond-order potential

✍ Scribed by R. Devanathan; F. Gao; W.J. Weber

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 778 KB
Volume: 255
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2006.11.045

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