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Atomistic analysis of the ion beam induced defect evolution

✍ Scribed by Maria Aboy; Lourdes Pelaz; Luis A. Marqués; Juan Barbolla


Book ID
113822674
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
273 KB
Volume
216
Category
Article
ISSN
0168-583X

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Atomistic simulation of defects evolutio
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Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)