Atomic structure and electronic properties of the GaN/ZnO (0001) interface
β Scribed by J. von Pezold; P. D. Bristowe
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 698 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0022-2461
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al~2~O~3~ substrates, respectively. Fe
## Abstract The atomic and electronic structures of gallium and nitrogen interstitial created at the 8βinterface of the (2$\bar 5$30) __Ξ£__ = 19 (__ΞΈ__ = 13.2Β°) tilt grain boundary in GaN were investigated by densityβfunctional based tightβbinding calculations. We found that the structure of lowest